czt5401 transistor (pnp) features power dissipation p cm: 1 w (tamb=25 ) collector current i cm: -0.6 a collector-base voltage v (br)cbo: -160 v operating and storage j unction temperature range t j, t stg: -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic=-100 a,i e =0 -160 v collector-emitter breakdown voltage v (br)ceo ic=-1ma,i b =0 -150 v emitter-base breakdown voltage v (br)ebo i e =-10 a,i c =0 -5 v collector cut-off current i cbo v cb =-100v,i e =0 -50 na emitter cut-off current i ebo v eb =-3v,i c =0 -50 na h fe(1) v ce =-5v,i c =-1ma 50 h fe(2) v ce =-5v,i c =-10ma 60 240 dc current gain h fe(3) v ce =-5v,i c =-50ma 50 v ce(sat) i c =-10ma,i b =-1ma -0.2 v collector-emitter saturation voltage v ce(sat) i c =-50ma,i b =-5ma -0.5 v v be(sat) i c =-10ma,i b =-1ma -1 v base-emitter voltage v be(sat) i c =-50ma,i b =-5ma -1 v transition frequency f t v ce =-10v,i c =-10ma,f=100mhz 100 300 mhz collector output capacitance c ob v cb =-10v,i e =0,f=1mhz 6 pf noise figure nf v ce =-5v,i c =-0.2ma, f=10hzto15.7khz,rs=10 ? 8 db SOT-223 1. base 2. collector 3. emitter czt5401 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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